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| UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER Storage Temperature Junction Temperature Total Power Dissipation (Ta=25C) Collector to Base Voltage: D1616 D1616A Collector to Emitter Voltage: D1616 D1616A Emitter to Base Voltage Collector Current (DC) Collector Current (*Pulse) Note: (*) Pulse width10ms, Duty cycle<50% VEBO Ic Ic VCEO SYMBOL Tstg Tj Pc VCBO VALUE -55 ~+150 150 750 60 120 50 60 6 1 2 UNIT C C mW V V V A A CHARACTERISTICS (Ta=25C) CHARACTERISTIC Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base Emitter On Voltage DC Current Gain: D1616 D1616A Current Gain Bandwidth Product Output Capacitance Turn On Time SYMBOL ICBO IEBO VCE(SAT) VBE(SAT) VBE(ON) hFE1 hFE2 fT Cob ton TEST CONDITIONS VCB=60V VEB= 6V IC=1A, IB=50mA IC=1A, IB=50mA VCE=2V, IC=50mA VCE=2V, IC=100mA VCE=2V, IC=1A VCE=2V, IC=100mA VCB=10V, f=1MHz VCE=10V, IC=100mA MIN. TYP. MAX. 100 100 0.3 1.2 700 600 400 UNIT nA nA V V mV 600 135 135 81 100 0.15 0.9 640 160 19 0.07 MHz pF us UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-008,A UTC 2SD1616/A CHARACTERISTIC Storage Time Fall Time NPN EPITAXIAL SILICON TRANSISTOR SYMBOL ts tf TEST CONDITIONS IB1=-IB2=10mA VBE(off)=-2-3V MIN. TYP. 0.95 0.07 MAX. UNIT us us Classification of hFE1 RANK hFE1 Y 135-270 G 200-400 L 300-600 UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-008,A UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R201-008,A |
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